MZ-75E120RW - Samsung 850 EVO Series 120GB Triple-Level Cell (TLC) SATA 6Gb/s 2.5-inch Solid State Drive

What is 3D V-NAND and how does it differ from existing technology Samsung's unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today's conventional planar V-NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utilising a smaller footprint. Optimise daily computing with TurboWrite technology for unrivalled read / write speeds Achieve the ultimate read / write performance to maximise your everyday computing experience with Samsung's TurboWrite technology. You not only obtain more than a 10% better user experience than 840 EVO but up to 1.9x faster random write speeds for 120 / 250 GB models as well. The 850 EVO delivers the top of its class performance in sequential read (540 MB/s) and write (520 MB/s) speeds. Plus, you also gain optimised random performance in all QD for client PC usage scenario. PCmark (250 GB ) : 6700 (840 EVO) > 7600 (850 EVO) Random Write (QD32, 120 GB) : 36000 IOPS (840 EVO) > 88000 IOPS (850 EVO)